Micro light emitting diode with high light extraction efficiency

ABSTRACT

A micro light emitting diode (LED) having a high light extraction efficiency includes a bottom conductive layer, a light emitting layer on the bottom conductive layer, and a top conductive structure on the light emitting layer. The micro LED additionally includes a conductive side arm electrically connecting the sidewall of the light emitting layer with the bottom conductive layer, and a reflective bottom dielectric layer arranged under the light emitting layer and above the bottom conductive layer. In some embodiments, the micro LED further includes an ohmic contact between the top conductive structure and the light emitting layer that has a small area and is transparent, thereby increasing the light emergent area and improving the light extraction efficiency.

RELATED APPLICATION

This application claims priority to U.S. Provisional Patent ApplicationNo. 62/965,889, filed Jan. 25, 2020, entitled “MICRO LIGHT EMITTINGDIODE WITH HIGH LIGHT EXTRACTION EFFICIENCY,” which is herebyincorporated by reference.

TECHNICAL FIELD

The present disclosure relates generally to display devices, and moreparticularly, to systems and fabrication methods for micro lightemitting diodes (LEDs) having high light extraction efficiency.

BACKGROUND

Display technologies are becoming increasingly popular in today'scommercial electronic devices. These display panels are widely used instationary large screens such as liquid crystal display televisions (LCDTVs) and organic light emitting diode televisions (OLED TVs) as well asportable electronic devices such as laptop personal computers,smartphones, tablets and wearable electronic devices. With thedevelopment of Mini LED and Micro LED technology in recent years,consumer devices and applications such as augmented reality (AR),projection, heads-up display (HUD), mobile device displays, wearabledevice displays, and automotive displays, require LED panels withimproved efficiency and resolution. For example, an AR displayintegrated within a goggle and positioned close to a wearer's eyes canhave a dimension of a fingernail while still demanding an HD definition(1280×720 pixels) or higher.

Light emitting diode (LED) is a junction luminescent device, and themain structure of LED is a P-N junction. Under a forward bias, the P-Njunction emits visual light or infrared light. The emission efficiencyof the LED is dependent on the epitaxy material, the ohmic contactelectrode, the chip structure, the geometric shape, and so on.

In the current technology for LED, the formation of the P-type LED posesa big challenge. For example, there is difficulty in doping P-GaN LEDdue to the lack of high work function metal matched with the P-GaN.Additionally, a low ohmic contact resistance is required by controllingthe annealing temperature, time, and atmosphere, etc. The electrode isrequired to be transparent to ensure the transmittance of the light fromthe LED. Generally, Au/Ni alloy is needed for forming a good ohmiccontact. Au is not transparent to the emitted wavelengths, which causesthe metal electrode to shield the emergent light rays. Therefore, theelectrode cannot be too thick. However, when the electrode is too thin,the thin layer of electrode can cause the non-uniform diffusion of thecurrent, which in turn would cause an overheating in the local area anda decrease in the transparency of the electrode.

A number of developments for LED displays are directed to improve theefficiency of the LED. For example, a flip-chip LED structure isimplemented by turning an LED structure face down and bonding theflipped over LED structure with a substrate having electrodes. Theflip-chip LED structure has more advantages on efficiency and technicalmaturity compared with other structures, because the flip-chip LEDstructure can reduce the photons absorbed by the P-type ohmic contactelectrode, and can avoid the emitting light shielding by the electrode.Although the flip-chip LEDs have been extensively studied, thelimitation of the total reflection effect has not been overcome yet,which limits the improving of the light extraction efficiency.

Although the Bragg mirror is conventionally used to improve thereflectivity, the Bragg mirror only has a high reflectance for thenormal incident light. The Bragg mirror has a low reflectance for theoblique incident light. In that situation, a total reflection can not beachieved.

Furthermore, when a back reflective structure is added in the flip-chipLED structure, the contact area between the metal electrode and thesemiconductor material is decreased, thereby causing the ohmic contactresistance dramatically increasing. The back contact formed in the backreflective structure reduces the reflective area of the back reflectivestructure, which in turn decreases the reflectivity of the reflectivestructure and the light extraction efficiency of the LED.

In addition, in the flip-chip LED structure, a low work function metalis needed for the electrode to achieve the N—GaN ohmic contact. Sincethe area left after the etching process is limited, it is very difficultto prepare the N-type ohmic contact.

SUMMARY

There is a need for improved LED designs that improve upon, and help toaddress the shortcomings of conventional LED systems and structures,such as those described above. In particular, there is a need fordisplay panels with high efficiency micro LED structures which have agood ohmic contact, a high extraction area, a high reflectivity, and ahigh extraction efficiency.

Various embodiments include a display panel includes an array of pixellight sources (e.g., LEDs, OLEDs) electrically coupled to correspondingpixel driver circuits (e.g., FETs).

In some embodiments, a micro light emitting diode having a high lightextraction efficiency includes: a bottom conductive layer; a lightemitting layer on the bottom conductive layer; a top conductivestructure on the light emitting layer; a bottom dielectric layerpositioned between the bottom conductive layer and the light emittinglayer; and a conductive side arm connecting a sidewall of a bottom layerof the light emitting layer and the bottom conductive layer.

In some embodiments, the micro light emitting diode, further includes:an ohmic contact layer positioned between the top conductive structureand the light emitting layer.

In some embodiments, the lateral width of the ohmic contact layer ismuch narrower than that of the light emitting layer.

In some embodiments, the top conductive structure directly covers theohmic contact layer and a substantial portion of the light emittinglayer is unshielded by the ohmic contact layer.

In some embodiments, the ohmic contact layer is a metal film.

In some embodiments, the thickness of the ohmic contact layer is lessthan 20 nm, and the lateral width of the ohmic contact layer is lessthan 0.5 μm.

In some embodiments, the material of the ohmic contact layer includes atleast one or more selected from of the group consisting of group I,group II, group III, group IV, group VI, and group VIII of metals from aperiodic table.

In some embodiments, the top conductive structure is transparent and theohmic contact layer is transparent.

In some embodiments, the bottom dielectric layer is a compositereflective layer.

In some embodiments, the composite reflective layer includes multiplelayers comprising at least an insulating reflective dielectric layer anda composite metal reflective layer, and the composite metal reflectivelayer is positioned at bottom of the insulating reflective dielectriclayer and contacts the bottom conductive layer.

In some embodiments, the composite metal reflective layer has multiplelayers.

In some embodiments, the insulating reflective dielectric layer furthercomprises a top insulating dielectric layer and a bottom Bragg mirror.

In some embodiments, the top insulating dielectric layer has no lessthan three layers.

In some embodiments, the material of the top insulating dielectric layeris metal oxide.

In some embodiments, the lateral width of the bottom conductive layer islarger than that of the bottom dielectric layer, so that the bottomconductive layer has a protruded top extending outside of the bottomdielectric layer; and one end of the conductive side arm is connected toa bottom layer of the light emitting layer and at least part of anotherend of the conductive side arm is connected to and supported on theprotruded top of the bottom conductive layer.

In some embodiments, the lateral width of the bottom dielectric layer isnot less than width of bottom of the light emitting layer.

In some embodiments, the light emitting layer further includes a firsttype of semiconductor layer, an active layer and a second type ofsemiconductor layer in turn from top down. In some embodiments, thesecond type of semiconductor layer has a protruded top extending outsideof the active layer and the first type of semiconductor layer, and anend of the conductive side arm covers and contacts the protruded top ofthe second type of semiconductor layer, and another end of theconductive side arm contacts the bottom conductive layer.

In some embodiments, the lateral width of the bottom conductive layer islarger than that of the second type of semiconductor layer and that ofthe bottom dielectric layer, so that the bottom conductive layer has aprotruded top extending outside of the second type of semiconductorlayer and the bottom dielectric layer. In some embodiments, at leastpart of the conductive side arm is supported on the protruded top of thebottom conductive layer.

In some embodiments, the lateral width of the bottom conductive layer isless than 2 μm.

In some embodiments, the width of the protruded top of the bottomconductive layer is not more than width of the protruded top of thesecond type of semiconductor layer.

In some embodiments, the second type of semiconductor layer furthercomprises a second type of top semiconductor layer and a second type ofbottom semiconductor layer, and the second type of bottom semiconductorlayer extends outside relative to the second type of top semiconductorlayer, thereby forming a protruded top.

In some embodiments, the material of the second type of topsemiconductor layer is different from that of the second type of bottomsemiconductor layer.

In some embodiments, the second type of top semiconductor layer isAlGaInP and the second type of bottom semiconductor layer is GaP; andthe first type of semiconductor layer is AlInP.

In some embodiments, the end of the conductive side arm: is inelectrical contact with the protruded top of the second type of bottomsemiconductor layer, is not in electrical contact with the second typeof top semiconductor layer, and is not in electrical contact with thelight emitting layer and the first type of semiconductor layer.

In some embodiments, the lateral width of the first type ofsemiconductor layer is equal to or larger than that of the active layer.

In some embodiments, the lateral width of the first type ofsemiconductor layer is much narrower than that of the active layer.

In some embodiments, the conductive side arm has an inverted L shape.

In some embodiments, the conductive side arm is attached and connectedto a sidewall of the bottom dielectric layer.

In some embodiments, the lateral width of the bottom conductive layer islarger than that of the bottom dielectric layer, and a sidewall of thebottom conductive layer protrudes outside and beyond a sidewall of theconductive side arm.

In some embodiments, the micro light emitting diode, further includes: atransparent isolation layer, which at least covers the protruded top ofthe second type of semiconductor layer, a top and a side wall of theconductive side arm, a sidewall of the light emitting layer, and asidewall of the first type of semiconductor layer, and the topconductive structure is positioned on top of the transparent isolationlayer.

In some embodiments, the material of the conductive side arm isconductive metal.

In some embodiments, the first type of semiconductor layer is an N typesemiconductor layer and the second type of semiconductor layer is a Ptype semiconductor layer.

In some embodiments, the first type of semiconductor layer is a P typesemiconductor layer and the second type of semiconductor layer is an Ntype semiconductor layer.

In some embodiments, the material of the bottom conductive layerincludes one or more types of conductive metal.

In some embodiments, the micro light emitting diode, further includes anelectric circuit base at bottom of the bottom conductive layer, whereinthe bottom conductive layer is used as a bonding layer that is bondedwith a surface of the electric circuit base.

In some embodiments, the electric circuit base at least includes adriving circuit that controls emission of the light emitting layer.

In some embodiments, the micro light emitting diode has a lightextraction efficiency of at least 20%.

In some embodiments, the micro light emitting diode has a lightextraction efficiency of at least 40%.

In some embodiments, the micro light emitting diode has a lightextraction efficiency of at least 60%.

Note that the various embodiments described above can be combined withany other embodiments described herein. The features and advantagesdescribed in the specification are not all inclusive and, in particular,many additional features and advantages will be apparent to one ofordinary skill in the art in view of the drawings, specification, andclaims. Moreover, it should be noted that the language used in thespecification has been principally selected for readability andinstructional purposes, and may not have been selected to delineate orcircumscribe the inventive subject matter.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the present disclosure can be understood in greater detail, amore particular description may be had by reference to the features ofvarious embodiments, some of which are illustrated in the appendeddrawings. The appended drawings, however, merely illustrate pertinentfeatures of the present disclosure and are therefore not to beconsidered limiting, for the description may admit to other effectivefeatures.

FIG. 1 is a cross-sectional view of a micro LED structure, according toa first embodiment.

FIG. 2 is a cross-sectional view of a micro LED structure, according toa second embodiment.

FIG. 3 is a cross-sectional view of a micro LED structure, according toa third embodiment.

FIG. 4 depicts a cross-sectional view of a structure of a bottomdielectric layer of a micro LED structure, according to someembodiments.

FIG. 5 depicts a cross-sectional view of a structure of a bottomdielectric layer of a micro LED structure, according to someembodiments.

FIG. 6 is a cross-sectional view of a micro LED structure, according toa fourth embodiment.

FIG. 7 is a cross-sectional view of a micro LED structure, according toa fifth embodiment.

FIG. 8 is a cross-sectional view of a micro LED structure, according toa sixth embodiment.

FIG. 9 is a cross-sectional view of a micro LED structure, according toa seventh embodiment.

FIG. 10 is a cross-sectional view of a micro LED structure, according toan eighth embodiment.

FIG. 11 is a cross-sectional view of a micro LED structure, according toa ninth embodiment.

FIG. 12 is a top view of a micro LED display panel 1200, in accordancewith some embodiments.

In accordance with common practice, the various features illustrated inthe drawings may not be drawn to scale. Accordingly, the dimensions ofthe various features may be arbitrarily expanded or reduced for clarity.In addition, some of the drawings may not depict all of the componentsof a given system, method or device. Finally, like reference numeralsmay be used to denote like features throughout the specification andfigures.

DETAILED DESCRIPTION

Numerous details are described herein in order to provide a thoroughunderstanding of the example embodiments illustrated in the accompanyingdrawings. However, some embodiments may be practiced without many of thespecific details, and the scope of the claims is only limited by thosefeatures and aspects specifically recited in the claims. Furthermore,well-known processes, components, and materials have not been describedin exhaustive detail so as not to unnecessarily obscure pertinentaspects of the embodiments described herein. Reference will now be madein detail to the present preferred embodiments to provide a furtherunderstanding of the invention. The specific embodiments and theaccompanying drawings discussed are merely illustrative of specific waysto make and use the invention, and do not limit the scope of theinvention or the appended claims.

Embodiments consistent with the disclosure include a display panel,including a substrate with an array of pixel driver circuits, an arrayof LEDs with structures described below, formed over the substrate, andmethods of making the display panel. The display panels having a highlight extraction efficiency are capable of overcoming the drawbacks ofthe conventional display systems.

FIG. 1 is a cross-sectional view of a micro LED structure, according toa first embodiment. The micro LED structure 100 illustrated in FIG. 1has a high light extraction efficiency. In some embodiments, the lightextraction efficiency is at least 20%. In some embodiments, the lightextraction efficiency is at least 30%. In some embodiments, the lightextraction efficiency is at least 40%. In some embodiments, the microLED includes a bottom conductive layer 102, a light emitting layer 106on the bottom conductive layer 102, and a top conductive structure 108on the light emitting layer 106. In some embodiments, the micro LEDfurther comprises a bottom dielectric layer 104 arranged between thebottom conductive layer 102 and the light emitting layer 106. In someembodiments, bottom dielectric layer 104 is a part of the light emittinglayer 106. In some embodiments, the light emitting layer 106 includesmany different layers. In some embodiments, a conductive side arm 110connects the sidewall of a bottom layer or bottom portion (not shownseparately in FIG. 1 ) of the light emitting layer 106 and the bottomconductive layer 102. In some embodiments, the conductive side arms 110are on both sides of the micro LED structure. In some embodiments, thetop conductive structure 108 forms a top conductive structure, which isnot limited by the scope of this embodiment. In some embodiments, theshape of the top conductive structure is a line, a square, a rectangle,or some other shapes.

FIG. 2 is a cross-sectional view of a micro LED structure, according toa second embodiment. The micro LED structure 200 illustrated in FIG. 2has a high light extraction efficiency. In some embodiments, the lightextraction efficiency is at least 20%. In some embodiments, the lightextraction efficiency is at least 30%. In some embodiments, the lightextraction efficiency is at least 40%. In some embodiments, the lightextraction efficiency is at least 50%. In some embodiments, the microLED structure 200 in FIG. 2 is based on the micro LED structure 100 ofFIG. 1 . Similar to the micro LED structure 100 in FIG. 1 , the microLED structure 200 includes a bottom conductive layer 202, a lightemitting layer 206, a bottom dielectric layer 204, a top conductivestructure 208, and a conductive side arm 210. In addition, in someembodiments, the bottom conductive layer 202 connected to the conductiveside arm 210 has a protruded bottom 202-1, so that the bottom of theconductive side arm 210 is at least partially or alternativelycompletely supported by the protruded bottom 202-1 of the bottomconductive layer 202. In one example, the sidewall of the conductiveside arm 210 is aligned with the sidewall of the protruded bottom 202-1of the bottom conductive layer 202 as shown in FIG. 2 . Furthermore, insome embodiments, an ohmic contact layer 212 is placed between the topconductive structure 208 and the light emitting layer 206. In someembodiments, the ohmic contact layer 212 is a metal film. The componentof the metal film of the ohmic contact layer 212 is at least selectedfrom one or more of the group I, group II, group III, group IV, groupVI, and group VIII in the periodic table, and combinations thereof, suchas Au, Cr, Be, Zn, Pt, Ti, Ge, Ni, In, and combinations thereof. In someembodiments, when the light emits from the top of the LED 200, atransparent top conductive structure to the emitted light is used as thetop conductive structure 208, such as an Indium tin oxide (ITO)transparent conductive film. In some embodiments, the ohmic contactlayer 212 is transparent to the emitted light. Preferably, when thethickness of the ohmic contact layer 212 is less than 20 nm, the ohmiccontact layer 212 can be transparent to the emitted light.

FIG. 3 is a cross-sectional view of a micro LED structure, according toa third embodiment. The micro LED structure 300 illustrated in FIG. 3has a high light extraction efficiency. In some embodiments, the lightextraction efficiency is at least 20%. In some embodiments, the lightextraction efficiency is at least 30%. In some embodiments, the lightextraction efficiency is at least 40%. In some embodiments, the lightextraction efficiency is at least 50%. In some embodiments, the lightextraction efficiency is at least 60%. In some embodiments, the microLED structure 300 in FIG. 3 is based on the micro LED structure 200 ofFIG. 2 . Similar to the micro LED structure 200 in FIG. 2 , the microLED structure 300 includes a bottom conductive layer 302, a lightemitting layer 306, a bottom dielectric layer 304, and a top conductivestructure 308, a conductive side arm 310, a protruded bottom 302-1 ofthe bottom conductive layer 302 underneath the conductive side arm 310,and an ohmic contact layer 312. In some embodiments, the width of theohmic contact layer 312 is much narrower than that of the light emittinglayer 306, so as to form an ohmic contact point. The top conductivestructure 308 covers the ohmic contact layer 312 and the light emittinglayer 306 is not completely shielded by the ohmic contact layer 312. Insome embodiments, to improve light extraction efficiency, the lateralwidth of the ohmic contact layer 312 is less than 1 μm, preferably, lessthan 0.5 μm. In some embodiments, to improve light transmittance of theohmic contact layer 312, the thickness of the ohmic contact layer 312 isless than 20 nm. In some embodiments, the material of the ohmic contactlayer 312 is dependent on the type of light emitting layer 306 and thematerial of the top conductive structure 308. In some embodiments, thematerial of the ohmic contact layer 312 is metal. In some preferredembodiments, the ohmic contact layer 312 has multiple layers formed bycomposite metal materials such as the materials used by the ohmiccontact layer 212 in FIG. 2 .

FIG. 4 depicts a cross-sectional view of a structure of a bottomdielectric layer of a micro LED structure, according to someembodiments. The bottom dielectric layer 404 can be used as the bottomdielectric layer in FIGS. 1 to 3 . The bottom dielectric layer 404 has areflectivity. In some embodiments, the bottom dielectric layer 404 has amore than 50% of reflectance. In some embodiments, the bottom dielectriclayer 404 has a more than 70% of reflectance. In some embodiments, thebottom dielectric layer 404 has a more than 90% of reflectance. In somepreferred embodiments, the bottom dielectric layer 404 is a compositereflective layer, which increases the reflective area and improves thereflective efficiency. As shown in FIG. 4 , the composite reflectivelayer 404 has multiple layers which at least includes an insulatingreflective dielectric layer 404-1 and a composite metal reflective layer404-2. In some embodiments, the composite metal reflective layer 404-2is arranged at the bottom of the insulating reflective dielectric layer404-1. In some embodiments, the composite metal reflective layer 404-2contacts the bottom conductive layer which is shown in FIGS. 1 to 3 . Insome embodiments, the material of the composite metal reflective layer404-2 is similar or same as that of the bottom conductive layer, such asCr, and/or Au, etc., which is used not only as a reflective layer, butalso as a buffering layer between the insulating reflective dielectriclayer 404-1 and the bottom conductive layer. The composite metalreflective layer 404-2 further increases the adhesive force between theinsulating reflective dielectric layer 404-1 and the bottom conductivelayer, so that the insulating reflective dielectric layer 404-1 and thebottom conductive layer are firmly bonded together.

FIG. 5 depicts a cross-sectional view of a structure of a bottomdielectric layer of a micro LED structure, according to someembodiments. The bottom dielectric layer 504 can be used as the bottomdielectric layer in FIGS. 1 to 4 . In some embodiments, the bottomdielectric layer 504 includes an insulating reflective dielectric layer504-1 and a composite metal reflective layer 504-2. In some embodiments,the insulating reflective dielectric layer 504-1 which is also shown inFIG. 4 includes a top insulating dielectric layer 504-11 and a bottomdistributed Bragg reflector (DBR) 504-12. In some embodiments, thematerial of the top insulating dielectric layer 504-11 is metal oxide,and in some instances the material of the top insulating dielectriclayer 504-11 further includes Si, In, or/and Sn, and so on. In someembodiments, a multi-layer Bragg mirror (DBR) is used as the bottom DBR504-12, which is known by those of skilled in the art and is not furtherdescribed herein. In some embodiments, the top insulating dielectriclayer 504-11 can increase the transmittance and the refractive index oflight rays, so that the light rays effectively enter into the bottom DBR504-12. In some embodiments, the top insulating dielectric layer 504-11includes multiple layers, such as more than or equal to three layers.

FIG. 6 is a cross-sectional view of a micro LED structure, according toa fourth embodiment. The micro LED structure 600 illustrated in FIG. 6has a high light extraction efficiency. In some embodiments, the lightextraction efficiency is at least 20%. In some embodiments, the lightextraction efficiency is at least 30%. In some embodiments, the lightextraction efficiency is at least 40%. In some embodiments, the lightextraction efficiency is at least 50%. In some embodiments, the lightextraction efficiency is at least 60%. In some embodiments, the microLED structure 600 in FIG. 6 is based on the micro LED structure 300 ofFIG. 3 . Similar to the micro LED structure 300 in FIG. 3 , the microLED structure 600 includes a bottom conductive layer 602, a lightemitting layer 606, a bottom dielectric layer 604, a top conductivestructure 608, a conductive side arm 610, and an ohmic contact layer 612which is much narrower than the light emitting layer 606, so as to forman ohmic contact point. In some embodiments as shown in FIG. 6 , thelateral width of the bottom conductive layer 602 is larger than that ofthe composite reflective layer (bottom dielectric layer 604), so thatthe bottom conductive layer 602 has a protruded top 602-2 protrudingoutside. In some embodiments, one end of the conductive side arm 610 isconnected to a bottom layer or a bottom portion (not separately shown inFIG. 6 ) of the light emitting layer 606, and at least part of the otherend of the conductive side arm 610 is connected to the protruded top602-2 of the bottom conductive layer 602. As shown in FIG. 6 , part ofthe bottom of the conductive side arm 610 is supported on the protrudedtop 602-2 of the bottom conductive layer 602. In some embodiments, toensure high extractive efficiency of the micro LED structure 600, thelateral width of the bottom conductive layer 602 is less than 2 μm,preferably, is in the range of 0.3-2 μm.

FIG. 7 is a cross-sectional view of a micro LED structure, according toa fifth embodiment. The micro LED structure 700 illustrated in FIG. 7has a high light extraction efficiency. In some embodiments, the lightextraction efficiency is at least 20%. In some embodiments, the lightextraction efficiency is at least 30%. In some embodiments, the lightextraction efficiency is at least 40%. In some embodiments, the lightextraction efficiency is at least 50%. In some embodiments, the lightextraction efficiency is at least 60%. In some embodiments, the microLED structure 700 in FIG. 7 is based on the micro LED structure 600 ofFIG. 6 . Similar to the micro LED structure 600 in FIG. 6 , the microLED structure 700 includes a bottom conductive layer 702, a lightemitting layer 706, a bottom dielectric layer 704, a top conductivestructure 708, a conductive side arm 710, and an ohmic contact layer 712which is much narrower than the light emitting layer 706, so as to forman ohmic contact point. And the lateral width of the bottom conductivelayer 702 is larger than that of the composite reflective layer (bottomdielectric layer 704), so that the bottom conductive layer 702 has aprotruded top 702-2 protruding outside. In some embodiments, the bottomconductive layer 702 has a protruded top 702-2 which protrudes outsiderelative to the bottom dielectric layer 704, so that the bottom of theconductive side arm 710 is at least partially or alternativelycompletely supported on the protruded top 702-2 of the bottom conductivelayer 702. In one example, the sidewall of the conductive side arm 710is aligned with the sidewall of the bottom conductive layer 702 as shownin FIG. 7 .

For the embodiments illustrated in FIG. 6 and FIG. 7 , in some examples,the lateral width of the bottom dielectric layer 704 is not less thanthe width of the bottom of the light emitting layer 706, and thesidewall of the light emitting layer 706 is vertical or is inclined. Inanother example, the lateral width of the bottom dielectric layer 704can be less than the width of the bottom of the light emitting layer706, while the shape of the conductive side arm 710 is an L shape.

FIG. 8 is a cross-sectional view of a micro LED structure, according toa sixth embodiment. The micro LED structure 800 illustrated in FIG. 8has a high light extraction efficiency. In some embodiments, the lightextraction efficiency is at least 20%. In some embodiments, the lightextraction efficiency is at least 30%. In some embodiments, the lightextraction efficiency is at least 40%. In some embodiments, the lightextraction efficiency is at least 50%. In some embodiments, the lightextraction efficiency is at least 60%. In some embodiments, the microLED structure 800 in FIG. 8 is based on the micro LED structure 700 ofFIG. 7 . Similar to the micro LED structure 700 in FIG. 7 , the microLED structure 800 includes a bottom conductive layer 802, a lightemitting layer 806, a bottom dielectric layer 804, a top conductivestructure 808, a conductive side arm 810, and an ohmic contact layer 812which is much narrower than the light emitting layer 806, so as to forman ohmic contact point. And the lateral width of the bottom conductivelayer 802 is larger than that of the composite reflective layer (bottomdielectric layer 804), so that the bottom conductive layer 802 has aprotruded top 802-2 protruding outside, and the bottom of the conductiveside arm 810 is at least partially or alternatively completely supportedon the protruded top 802-2 of the bottom conductive layer 802. In oneexample, the side wall of the conductive side arm 810 is aligned withthe sidewall of the bottom conductive layer 802 as shown in FIG. 8 . Insome embodiments, the bottom lateral width of the light emitting layer806 is less than the lateral width of the bottom dielectric layer 804.In some embodiments, the conductive side arm 810 has an inverted Lshape. The conductive side arm 810 includes a horizontal part 810-1 anda vertical part 810-2. The end of the horizontal part 810-1 extends toand contacts a bottom layer or a bottom portion (not separately shown inFIG. 8 ) of the light emitting layer 806, while the end of the verticalpart 810-2 extends to and contacts the bottom conductive layer 802.

FIG. 9 is a cross-sectional view of a micro LED structure, according toa seventh embodiment. The micro LED structure 900 illustrated in FIG. 9has a high light extraction efficiency. In some embodiments, the lightextraction efficiency is at least 20%. In some embodiments, the lightextraction efficiency is at least 30%. In some embodiments, the lightextraction efficiency is at least 40%. In some embodiments, the lightextraction efficiency is at least 50%. In some embodiments, the lightextraction efficiency is at least 60%. In some embodiments, the lightextraction efficiency is at least 70%. In some embodiments, the microLED structure 900 in FIG. 9 is based on the micro LED structure 800 ofFIG. 8 . Similar to the micro LED structure 800 in FIG. 8 , the microLED structure 900 includes a bottom conductive layer 902, a lightemitting layer 906, a bottom dielectric layer 904, a top conductivestructure 908, a conductive side arm 910, and an ohmic contact layer 912which is much narrower than the light emitting layer 906, so as to forman ohmic contact point. Furthermore, the lateral width of the bottomconductive layer 902 is larger than that of the composite reflectivelayer (bottom dielectric layer 904), so that the bottom conductive layer902 has a protruded top 902-2 protruding outside, and the bottom of theconductive side arm 910 is at least partially or alternativelycompletely supported on the protruded top 902-2 of the bottom conductivelayer 902. In one example, the side wall of the conductive side arm 910is aligned with the sidewall of the bottom conductive layer 902 as shownin FIG. 9 . In some embodiments, the conductive side arm 910 has aninverted L shape. The conductive side arm 910 includes a horizontal part910-1 and a vertical part 910-2.

As shown in FIG. 9 , in some embodiments, the light emitting layer 906comprises a first type of semiconductor layer 906-1, an active layer906-2 and a second type of semiconductor layer 906-3 in turn from thetop down. In some embodiments, the second type of semiconductor layer906-3 has a lateral width that is larger than that of the first type ofsemiconductor layer 906-1, and that of the active layer 906-2,therefore, forming a protruded top 906-3-3 at the edge of the secondtype of semiconductor layer 906-3. In some embodiments, the lateralwidth of the first type of semiconductor layer 906-1 is the same as thelateral width of the active layer 906-2. In some embodiments, thelateral width of the first type of semiconductor layer 906-1 is the sameas the lateral width of the top conductive structure 908.

In some embodiments, the end of horizontal part 910-1 of the conductiveside arm 910 covers and contacts the protruded top 906-3-3 of the secondtype of semiconductor layer 906-3 and the other end of the vertical part910-2 of the conductive side arm 910 contacts the bottom conductivelayer 902.

In some embodiments, the first type of semiconductor layer 906-1 is an Ntype semiconductor layer and the second type of semiconductor layer906-3 is a P type semiconductor layer. Alternatively, in someembodiments, the first type of semiconductor layer 906-1 is a P typesemiconductor layer and the second type of semiconductor layer 906-3 isan N type semiconductor layer. In some embodiments, the material of theN type semiconductor is N type AlInP or N type GaAs, or a compositematerial of various N type semiconductor layers. In some embodiments,the material of the P type semiconductor layer is P type GaP, or P typeAlGaInP.

In some embodiments, the lateral width of the bottom conductive layer902 is larger than that of the second type of semiconductor layer 906-3.In some embodiments, the lateral width of the second type ofsemiconductor layer 906-3 is equal to that of the bottom dielectriclayer 904. The bottom conductive layer 902 has a protruded top 902-2that extends outside relative to the second type of semiconductor layer906-3 and the bottom dielectric layer 904. In some embodiments, at leastpart of the conductive side arm 910 is at least partially oralternatively completely supported on the protruded top 902-2 of thebottom conductive layer 902. In some embodiments, as shown in FIG. 9 ,the whole bottom of the conductive side arm 910 is supported on theprotruded top 902-2 of the bottom conductive layer 902.

In some embodiments, the end of the conductive side arm 910 which isconnected to the protruded top 906-3-3 of the second type ofsemiconductor layer 906-3 is not directly connected to the active layer906-2. As shown in FIG. 9 , there is a gap between the vertical sidewallof the horizontal part 910-1 of the conductive side arm 910 and theactive layer 906-2. In some preferred embodiments, the lateral width ofthe protruded top 902-2 of the bottom conductive layer 902 (only thewidth of the portion that is extended outside of the bottom dielectriclayer 904) is equal to or less than that of the protruded top 906-3-3 ofthe second type of semiconductor layer 906-3 (only the width of theportion that is extended outside of the active layer 906-2). That widtharrangement ensures that the bottom end of the conductive side arm 910sits on the bottom conductive layer 902 and avoids the upper end of theconductive side arm 910 contacting the active layer 906-2, so as to forma stable and reliable electrical contact structure.

FIG. 10 is a cross-sectional view of a micro LED structure, according toan eighth embodiment. The micro LED structure 1000 illustrated in FIG.10 has a high light extraction efficiency. In some embodiments, thelight extraction efficiency is at least 20%. In some embodiments, thelight extraction efficiency is at least 30%. In some embodiments, thelight extraction efficiency is at least 40%. In some embodiments, thelight extraction efficiency is at least 50%. In some embodiments, thelight extraction efficiency is at least 60%. In some embodiments, thelight extraction efficiency is at least 70%. In some embodiments, thelight extraction efficiency is at least 80%. In some embodiments, themicro LED structure 1000 in FIG. 10 is based on the micro LED structure900 of FIG. 9 . Similar to the micro LED structure 900 in FIG. 9 , themicro LED structure 1000 includes a bottom conductive layer 1002, alight emitting layer 1006, a bottom dielectric layer 1004, a topconductive structure 1008, a conductive side arm 1010 with an inverted Lshape, and an ohmic contact layer 1012 which is much narrower than thelight emitting layer 1006, so as to form an ohmic contact point. In someembodiments, the light emitting layer 1006 comprises a first type ofsemiconductor layer 1006-1, an active layer 1006-2 and a second type ofsemiconductor layer 1006-3 from the top down.

As seen in FIG. 10 , in some embodiments, the second type ofsemiconductor layer 1006-3 includes a second type of top semiconductorlayer 1006-31 and a second type of bottom semiconductor layer 1006-32.The second type of bottom semiconductor layer 1006-32 extends outsiderelative to the second type of top semiconductor layer 1006-31, so thatthe extended part of the second type of bottom semiconductor layer1006-32 is used as a protruded top 1006-32-1. In some embodiments, thematerial of the second type of top semiconductor layer 1006-31 and thematerial of the second type of bottom semiconductor layer 1006-32 can besame or different. In some embodiments, the second type of the topsemiconductor layer 1006-31 is AlGaInP, and the second type of thebottom semiconductor layer 1006-32 is GaP. Additionally, in someembodiments, the first type of semiconductor layer 1006-1 has one layeror multiple layers. For example, the first type of semiconductor layer1006-1 includes N type AlInP and N type GaAs from the top down. Inanother example, the first type of semiconductor layer 1006-1 only has Ntype AlInP. In some embodiments, the N type AlInP is directly beneathand in contact with the ohmic contact layer 1012 and the top conductivestructure 1008. In one preferred embodiment, the light emitting layer1006 includes N type AlInP, a quantum active layer, P type AlGaInP and Ptype GaP in turn from the top down.

As illustrated in FIG. 10 , in some embodiments, the horizontal part1010-1 of the conductive side arm 1010 covers and is in direct contactwith the second type of bottom semiconductor layer 1006-32 and the endof the horizontal part 1010-1 is not directly connected to the secondtype of top semiconductor layer 1006-31, the active layer 1006-2 and/orthe first type of semiconductor layer 1006-1. In some embodiments, thelateral width of the bottom conductive layer 1002 is larger than that ofthe bottom dielectric layer 1004. In some embodiments, the sidewall ofthe bottom conductive layer 1002 protrudes outside from the sidewall ofthe conductive side arm 1010 (not shown in FIG. 10 ). In someembodiments, the material of the conductive side arm 1010 is conductivemetal or another conductive material.

Similar to FIGS. 1 to 9 , in some embodiments, there are two conductiveside arms 1010 on each side of the micro LED structure 1000 in FIG. 10 .Furthermore, similar to FIGS. 1 to 9 , in some embodiments, theconductive side arm 1010 can be attached to and contact the sidewall ofthe bottom dielectric layer 1004 in FIG. 10 . In an alternative toembodiment, the shape of the conductive side arm 1010 can be changedinto another shape without contacting the sidewall of the bottomdielectric layer 1004 (not shown in FIG. 10 ), and the equivalentembodiments or variations may be implemented by a person skilled in theart.

FIG. 11 is a cross-sectional view of a micro LED structure, according toa ninth embodiment. The micro LED structure 1100 illustrated in FIG. 11has a high light extraction efficiency. In some embodiments, the lightextraction efficiency is at least 20%. In some embodiments, the lightextraction efficiency is at least 30%. In some embodiments, the lightextraction efficiency is at least 40%. In some embodiments, the lightextraction efficiency is at least 50%. In some embodiments, the lightextraction efficiency is at least 60%. In some embodiments, the lightextraction efficiency is at least 70%. In some embodiments, the lightextraction efficiency is at least 80%. In some embodiments, the lightextraction efficiency is at least 90%. In some embodiments, the microLED structure 1100 in FIG. 11 is based on the micro LED structure 1000of FIG. 10 . Similar to the micro LED structure 1000 in FIG. 10 , themicro LED structure 1100 includes a bottom conductive layer 1102, alight emitting layer 1106, a bottom dielectric layer 1104, a topconductive structure 1108, a conductive side arm 1110 with an inverted Lshape, and an ohmic contact layer 1112 which is much narrower than thelight emitting layer 1106, so as to form an ohmic contact point. In someembodiments, the light emitting layer 1106 comprises a first type ofsemiconductor layer 1106-1, an active layer 1106-2 and a second type ofsemiconductor layer 1106-3 from the top down. In some embodiments, thesecond type of semiconductor layer 1106-3 includes a second type of topsemiconductor layer 1106-31 and a second type of bottom semiconductorlayer 1106-32.

According to FIG. 11 , the micro LED structure 1100 with a high lightextraction efficiency further includes a transparent isolation layer1114. In some embodiments, there are two transparent isolation layers1114 on each side of the micro LED structure 1100. In some embodiments,the transparent isolation layer 1114 at least directly covers a portionwithin the gap, or alternatively, all the gap between the conductiveside arm 1110 and the side wall of the light emitting layer 1106 of theprotruded top 1106-32-1 of the second type of bottom semiconductor layer1106-32. The transparent isolation layer 1114 also covers directly theexposed sidewall of the second type of top semiconductor layer 1106-31,the top and the side wall toward the micro LED structure 1100 of theconductive side arm 1110, the sidewall of the active layer 1106-2, andat least a substantial portion of the sidewall from the bottom up of thefirst type of semiconductor layer 1106-1. In some embodiments, thesubstantial portion of the sidewall from the bottom up of the first typeof semiconductor layer 1106-1 is at least 50% of the sidewall. In someembodiments, the substantial portion of the sidewall from the bottom upof the first type of semiconductor layer 1106-1 is at least 70% of thesidewall. In some embodiments, the substantial portion of the sidewallfrom the bottom up of the first type of semiconductor layer 1106-1 is atleast 90% of the sidewall.

In some embodiments, the top conductive structure 1108 is arranged onthe sidewall and the top of the ohmic contact layer 1112, the protrudedtop of the first type of semiconductor layer 1106-1, and the top of thetransparent isolation layer 1114. In some embodiments, the top of thetransparent isolation layer 1114 at least covers the part of the top ofthe first type of semiconductor layer 1106-1 (not shown in FIG. 11 ) andnot covers the top of the ohmic contact layer 1112.

In some embodiments, the material of the bottom conductive layer 1102includes one or more types of conductive metal, such as Cr, Pt, Au, Snand so on. A multi-layer composite conductive layer used as the bottomconductive layer 1102 is made by those metals. In some embodiments, thebottom conductive layer 1102 is further used as a bonding layer to bebonded on the surface of an electric circuit base 1116 (not shown inFIG. 11 ), so as to electrically connect the light emitting layer 1106with the electric circuit base 1116. The electric circuit base 1116 atleast includes a driving circuit, which controls the light emission ofthe light emitting layer 1106.

In some embodiments, the bottom of the conductive side arm 1110 extendsdownward but is not in contact with the electric circuit base 1116. Insome embodiments, when the bottom of the conductive side arm 1110extends downward to contact the electric circuit base 1116, the contactelectrode in the electric circuit base 1116 is connected to the bottomof the conductive side arm 1110, and the other area not in contact withthe contact electrode beneath the bottom of the conductive side arm 1110is insulated. In some embodiments, the bottom of the conductive side arm1110 is also bonded on the surface of the electric circuit base 1116.

As described above in FIGS. 1 to 11 , in the LED structures which have ahigh light extraction efficiency disclosed herein, the light emittinglayer uses the bottom conductive layer to achieve a downward electricalcontact and uses the top conductive structure to achieve an upwardelectrical contact. Furthermore, the conductive side arm electricallyconnects the sidewall of the light emitting layer with both sides of thebottom conductive layer. When the bottom of the conductive side armextends downward to contact the electric circuit base, the conductiveside arm further electrically connects the light emitting layer with theelectric circuit base, which increases the light emergent area andimproves the light extraction efficiency.

Additionally, the reflective area of the composite reflective layer(bottom dielectric layer) is enlarged by using the conductive side armelectrically connecting the sidewall of the light emitting layer and thebottom conductive layer, which further improves the light extractionefficiency of the LED.

Furthermore, the ohmic contact layer formed between the top conductivestructure and the light emitting layer can be made very small and thin,such as a transparent metal film. That structure ensures a good ohmiccontact between the light emitting layer and the top conductivestructure, which increases the light emergent area and also improves thelight extraction efficiency.

Although the detailed description contains many specifics, these shouldnot be construed as limiting the scope of the invention but merely asillustrating different examples and aspects of the invention. It shouldbe appreciated that the scope of the invention includes otherembodiments not discussed in detail above. For example, micro LEDstructures and layers with different shapes and thicknesses may also beused, such as square base or other polygon base. Various othermodifications, changes and variations which will be apparent to thoseskilled in the art may be made in the arrangement, operation and detailsof the method and apparatus of the present invention disclosed hereinwithout departing from the spirit and scope of the invention as definedin the appended claims. Therefore, the scope of the invention should bedetermined by the appended claims and their legal equivalents.

Further embodiments also include various subsets of the aboveembodiments including embodiments shown in FIGS. 1 to 11 combined orotherwise re-arranged in various other embodiments.

FIG. 12 is a top view of a micro LED display panel 1200, in accordancewith some embodiments. The display panel 1200 includes a data interface1210, a control module 1220 and a pixel region 1250. The data interface1210 receives data defining the image to be displayed. The source(s) andformat of this data will vary depending on the application. The controlmodule 1220 receives the incoming data and converts it to a formsuitable to drive the pixels in the display panel. The control module1220 may include digital logic and/or state machines to convert from thereceived format to one appropriate for the pixel region 1250, shiftregisters or other types of buffers and memory to store and transfer thedata, digital-to-analog converters and level shifters, and scancontrollers including clocking circuitry.

The pixel region 1250 includes an array of pixels. The pixels includemicro LEDs, such as the micro LED 1234 with structures described inFIGS. 1-11 , integrated with pixel drivers in some examples. In thisexample, the display panel 1200 is a color RGB display panel. Itincludes red, green and blue pixels. Within each pixel, the LED 1234 iscontrolled by a pixel driver. The pixel makes contact to a supplyvoltage (not shown) and ground via a ground pad 1236, and also to acontrol signal, according to some embodiments. Although not shown inFIG. 12 , the p-electrode of the LED 1234 and the output of the drivingtransistor are electrically connected. The LED current driving signalconnection (between p-electrode of LED and output of the pixel driver),ground connection (between n-electrode and system ground), the supplyvoltage Vdd connection (between source of the pixel driver and systemVdd), and the control signal connection to the gate of the pixel driverare made in accordance with various embodiments.

FIG. 12 is merely a representative figure. Other designs will beapparent. For example, the colors do not have to be red, green and blue.They also do not have to be arranged in columns or stripes. As oneexample, apart from the arrangement of a square matrix of pixels shownin FIG. 12 , an arrangement of hexagonal matrix of pixels can also beused to form the display panel 1200.

In some applications, a fully programmable rectangular array of pixelsis not necessary. Other designs of display panels with a variety ofshapes and displays may also be formed using the device structuresdescribed herein. One class of examples is specialty applications,including signage and automotive applications. For example, multiplepixels may be arranged in the shape of a star or a spiral to form adisplay panel, and different patterns on the display panel can beproduced by turning on and off the LEDs. Another specialty example isautomobile headlights and smart lighting, where certain pixels aregrouped together to form various illumination shapes and each group ofLED pixels can be turned on or off or otherwise adjusted by individualpixel drivers.

Different types of display panels can be fabricated. For example, theresolution of a display panel can range typically from 8×8 to 3840×2160.Common display resolutions include QVGA with 320×240 resolution and anaspect ratio of 4:3, XGA with 1024×768 resolution and an aspect ratio of4:3, D with 1280×720 resolution and an aspect ratio of 16:9, FHD with1920×1080 resolution and an aspect ratio of 16:9, UHD with 3840×2160resolution and an aspect ratio of 16:9, and 4K with 4096×2160resolution. There can also be a wide variety of pixel sizes, rangingfrom sub-micron and below to 10 mm and above. The size of the overalldisplay region can also vary widely, ranging from diagonals as small astens of microns or less up to hundreds of inches or more.

Example applications include display screens, light engines forhome/office projectors and portable electronics such as smart phones,laptops, wearable electronics, AR and VR glasses, and retinalprojections. The power consumption can vary from as low as a fewmilliwatts for retinal projectors to as high as kilowatts for largescreen outdoor displays, projectors, and smart automobile headlights. Interms of frame rate, due to the fast response (nanoseconds) of inorganicLEDs, the frame rate can be as high as KHz, or even MHz for smallresolutions.

Further embodiments also include various subsets of the aboveembodiments including embodiments as shown in FIGS. 1 to 12 combined orotherwise re-arranged in various other embodiments.

Although the detailed description contains many specifics, these shouldnot be construed as limiting the scope of the invention but merely asillustrating different examples and aspects of the invention. It shouldbe appreciated that the scope of the invention includes otherembodiments not discussed in detail above. For example, the approachesdescribed above can be applied to the integration of functional devicesother than LEDs and OLEDs with control circuitry other than pixeldrivers. Examples of non-LED devices include vertical cavity surfaceemitting lasers (VCSEL), photodetectors, micro-electro-mechanical system(MEMS), silicon photonic devices, power electronic devices, anddistributed feedback lasers (DFB). Examples of other control circuitryinclude current drivers, voltage drivers, trans-impedance amplifiers,and logic circuits.

The preceding description of the disclosed embodiments is provided toenable any person skilled in the art to make or use the embodimentsdescribed herein and variations thereof. Various modifications to theseembodiments will be readily apparent to those skilled in the art, andthe generic principles defined herein may be applied to otherembodiments without departing from the spirit or scope of the subjectmatter disclosed herein. Thus, the present disclosure is not intended tobe limited to the embodiments shown herein but is to be accorded thewidest scope consistent with the following claims and the principles andnovel features disclosed herein.

Features of the present invention can be implemented in, using, or withthe assistance of a computer program product, such as a storage medium(media) or computer readable storage medium (media) having instructionsstored thereon/in which can be used to program a processing system toperform any of the features presented herein. The storage medium caninclude, but is not limited to, high-speed random access memory, such asDRAM, SRAM, DDR RAM or other random access solid state memory devices,and may include non-volatile memory, such as one or more magnetic diskstorage devices, optical disk storage devices, flash memory devices, orother non-volatile solid state storage devices. Memory optionallyincludes one or more storage devices remotely located from the CPU(s).Memory or alternatively the non-volatile memory device(s) within thememory, comprises a non-transitory computer readable storage medium.

Stored on any machine readable medium (media), features of the presentinvention can be incorporated in software and/or firmware forcontrolling the hardware of a processing system, and for enabling aprocessing system to interact with other mechanisms utilizing theresults of the present invention. Such software or firmware may include,but is not limited to, application code, device drivers, operatingsystems, and execution environments/containers.

It will be understood that, although the terms “first,” “second,” etc.may be used herein to describe various elements or steps, these elementsor steps should not be limited by these terms. These terms are only usedto distinguish one element or step from another.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the claims. Asused in the description of the embodiments and the appended claims, thesingular forms “a,” “an” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. It willalso be understood that the term “and/or” as used herein refers to andencompasses any and all possible combinations of one or more of theassociated listed items. It will be further understood that the terms“comprises” and/or “comprising,” when used in this specification,specify the presence of stated features, integers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, integers, steps, operations,elements, components, and/or groups thereof.

The foregoing description, for purpose of explanation, has beendescribed with reference to specific embodiments. However, theillustrative discussions above are not intended to be exhaustive or tolimit the claims to the precise forms disclosed. Many modifications andvariations are possible in view of the above teachings. The embodimentswere chosen and described in order to best explain principles ofoperation and practical applications, to thereby enable others skilledin the art.

What is claimed is:
 1. A micro light emitting diode having a high lightextraction efficiency comprising: a bottom conductive layer; a lightemitting layer on the bottom conductive layer; a top conductivestructure on the light emitting layer; a bottom dielectric layerpositioned between the bottom conductive layer and the light emittinglayer; and a conductive side arm connecting a sidewall of a bottom layerof the light emitting layer and the bottom conductive layer, wherein:the light emitting layer further comprises a first type of semiconductorlayer, an active layer and a second type of semiconductor layer in turnfrom top down, the second type of semiconductor layer has a protrudedtop extending outside of the active layer and the first type ofsemiconductor layer, and an end of the conductive side arm covers andcontacts the protruded top of the second type of semiconductor layer,and another end of the conductive side arm contacts the bottomconductive layer, wherein lateral width of the bottom conductive layeris larger than that of the bottom dielectric layer.
 2. The micro lightemitting diode according to claim 1, further comprising an ohmic contactlayer positioned between the top conductive structure and the lightemitting layer.
 3. The micro light emitting diode according to claim 1,wherein: the lateral width of the bottom conductive layer is larger thanthat of the second type of semiconductor layer, so that the bottomconductive layer has a protruded top extending outside of the secondtype of semiconductor layer and the bottom dielectric layer, and atleast part of the conductive side arm is supported on the protruded topof the bottom conductive layer.
 4. The micro light emitting diodeaccording to claim 3, wherein the lateral width of the bottom conductivelayer is less than 2 μm.
 5. The micro light emitting diode according toclaim 3, wherein width of the protruded top of the bottom conductivelayer is not more than width of the protruded top of the second type ofsemiconductor layer.
 6. The micro light emitting diode according toclaim 1, wherein the second type of semiconductor layer furthercomprises a second type of top semiconductor layer and a second type ofbottom semiconductor layer, and the second type of bottom semiconductorlayer extends outside relative to the second type of top semiconductorlayer, thereby forming a protruded top.
 7. The micro light emittingdiode according to claim 6, wherein material of the second type of topsemiconductor layer is different from that of the second type of bottomsemiconductor layer.
 8. The micro light emitting diode according toclaim 6, wherein the second type of top semiconductor layer is AlGaInPand the second type of bottom semiconductor layer is GaP; and the firsttype of semiconductor layer is AlInP.
 9. The micro light emitting diodeaccording to claim 6, wherein, the end of the conductive side arm: is inelectrical contact with the protruded top of the second type of bottomsemiconductor layer, is not in electrical contact with the second typeof top semiconductor layer, and is not in electrical contact with thelight emitting layer and the first type of semiconductor layer.
 10. Themicro light emitting diode according to claim 1, wherein lateral widthof the first type of semiconductor layer is equal to or larger than thatof the active layer.
 11. The micro light emitting diode according toclaim 1, wherein lateral width of the first type of semiconductor layeris much narrower than that of the active layer.
 12. The micro lightemitting diode according to claim 1, wherein the conductive side arm hasan inverted L shape.
 13. The micro light emitting diode according toclaim 1, wherein the conductive side arm is attached and connected to asidewall of the bottom dielectric layer.
 14. The micro light emittingdiode according to claim 1, wherein a sidewall of the bottom conductivelayer protrudes outside and beyond a sidewall of the conductive sidearm.
 15. The micro light emitting diode according to claim 1, furthercomprising: a transparent isolation layer, which at least covers theprotruded top of the second type of semiconductor layer, a top and aside wall of the conductive side arm, a sidewall of the light emittinglayer, and a sidewall of the first type of semiconductor layer, and thetop conductive structure is positioned on top of the transparentisolation layer.
 16. The micro light emitting diode according to claim1, wherein the first type of semiconductor layer is an N typesemiconductor layer and the second type of semiconductor layer is a Ptype semiconductor layer.
 17. The micro light emitting diode accordingto claim 1, wherein the first type of semiconductor layer is a P typesemiconductor layer and the second type of semiconductor layer is an Ntype semiconductor layer.
 18. The micro light emitting diode accordingto claim 1, further comprising an electric circuit base at bottom of thebottom conductive layer, wherein the bottom conductive layer is used asa bonding layer that is bonded with a surface of the electric circuitbase, and the electric circuit base at least comprises a driving circuitthat controls emission of the light emitting layer.
 19. The micro lightemitting diode according to claim 1, wherein the micro light emittingdiode has a light extraction efficiency of at least 40%.
 20. The microlight emitting diode according to claim 1, wherein the micro lightemitting diode has a light extraction efficiency of at least 60%.